Abstract: In this work, we demonstrate the enlargement of the memory window of Si channel FeFET with ferroelectric Hf0.5Zr0.5O2 by gate-side dielectric interlayer engineering. By inserting a 3 nm Al2 ...
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We can all agree that an extra layer of protection is always a welcome option when securing our devices. However, modern methods that require you to insert a physical security key into the USB port ...
Insert, format, and cross-reference academic citations in Word documents. Supports Chinese (GB/T 7714-2015) and international (IEEE, APA 7th, Chicago, MLA, Harvard) standards.
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